Morphology, optical properties, crystal and electronic structure of monocrystal siliconafter plasma processing, depending on initial voltage of magnetoplasma compressor (MPC), have been studied. It was shown that periodic surface structures are formed on silicon only in the short range of initial MPC voltages (2.8-3.2 kV), but at higher initial voltages (3.4-3.6 kV) the formation of "crater" and carrying out of the part of the material on its periphery till the moment of crystallization is observed without the formation of surface structures. The increase of the silicon lattice constant has been observed after plasma processing at all initial voltages that correlate with the decrease of band-gap energy by data of optical spectroscopy.
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