A 1.9GHz SiGe BiCMOS PHS Transceiver with an Integrated PA and a Fast Settling PLL

摘要

A fully integrated PHS transceiver achieving -105dBm sensitivity and +21dBm output power is presented. The transceiver is implemented in a 0.35μm SiGe BiCMOS process occupying an area of 13 mm{sup}2 and dissipating 74mA in receive mode and 280mA in transmit from 3V supply. The receiver is based on a low-IF architecture and does not require any external filters. The TX integrates a linear +21dBm Power Amplifier and achieves 5% EVM and -60dBc ACP. The transceiver integrates a fractional-N synthesizer with <30μs lock time and -120dBc/Hz phase noise @600kHz offset frequency. The base-band interface is at 1.2MHz, compatible with commercially available PHS base-band chips to create a two chip solution for PHS phones.