Study on Effect and Growth of Silicon Oxide Layer in Zirconia/Silicon Heterostructure by Electron Microscopy

摘要

Effect of ultra-thin SiOx layer on epitaxial growth of YSZ film on Si(001) wafer has been considered. The SiOx layer thinner than 2nm has weak crystallinity. YSZ film can epitaxially grow on Si wafer with SiOx layer. It has been clarified, using high temperature cross-sectional TEM method, that crystallization of YSZ layer introduces strain in the Si surface region, and that the SiOx layer thicker than 1nm can relax the crystallization strain around the interface. Thus, the SiOx layer with the thickness about 1-2nm has two effects of transmission of epitaxy and strain relaxation in YSZ/SiOx/Si(001) system. Dopant- and structural- modification of YSZ buffer layer has been effective to prevent the growth of SiOx layer, arid to improve C-V characteristics.