Hydrogen Sensing Transient Responses of-a GaN-based Schottky Diode

摘要

The transient response properties of a Pd/GaN Schottky diode are studied and reported. With increasing the hydrogen concentration from 494 to 9970 ppm H_2/air at 450 K, the adsorption and desorption response time constants xa and xb are decreased from 293 to 14 s and from 15 to 9 s, respectively. The xb is shorter than that of xa. The corresponding initial rate of current variation AI/At values are increased from 2.83 to 364.6 μA/s and from -55.33 to -567.16 uA/s, respectively. In addition, by increasing temperature from 300 to 570 K, the τa is decreased from 1187 to 10.5 s. j The corresponding AI/At is increased from 3.47 to 747.71 uA/s. Therefore, the studied device can be operated particularly under very wide hydrogen concentration regimes with considerably short response times over widespread temperature regimes.