A novel potassium ion selective microelectrode (K+ISME) and A cDNA array sensor based on porous silicon (PS) were developed. The calibration curve for the K+ISME is linear within a wide range of pK = 1.0 ~ 4.0. Its slope is 56 mV per decade, which is near Nernst response. The variation of the response is within ± 2 mV during 2 months. The attachment rate of PS substrate to oligonucleotide for the DMA sensor is much higher than that for glass and Si substrate. The cDNA sensor exhibits much higher sensitivity than that of the sensors with the substrate of Si and glass. Good performances of the K+ISME and the cDNA array sensor are attributed to large internal surface area and easily modified microstructure of PS.
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机译：开发了一种新型钾离子选择性微电极（K + ISME）和基于多孔硅（PS）的cDNA阵列传感器。 K + ISME的校准曲线是PK = 1.0〜4.0的宽范围内的线性。它的斜坡是每十年56 MV，这是靠近NERNST的反应。响应的变化在2个月内在±2 mV范围内。对于DMA传感器的PS基材与寡核苷酸的连接速率远高于玻璃和Si衬底的寡核苷酸。 CDNA传感器的灵敏度远远高于Si和玻璃基板的灵敏度。 K + ISME的良好性能和CDNA阵列传感器归因于大的内表面积和易于修改PS的微观结构。
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