Porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, method for preparing the porous oxide semiconductor and gas sensor including the porous oxide semiconductor as gas sensing material

摘要

The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm. The oxide semiconductor gas sensor of the present invention exhibits ultrahigh response and ultrafast response to various analyte gases due to the presence of the controlled nanopores, mesopores, and macropores.