PLASMA- AND BEAM-ASSISTED DEPOSITION METHODS

摘要

Upgraded technology of combined substrate treatment (pre-nitriding plus hard ceramic film deposition) based on cathodic arc evaporation and ion acceleration with a bias voltage resulted in a substantial improvement of performance and increase in the useful lifetime of treated products. Meantime, as an alternative to the arc-based technology, two groups of new plasma- and beam-assisted deposition methods were developed. The first group allows deposition on dielectrics and is based on a modernization of the fast neutral molecular beam sources, which transforms the sources to universal devices able to produce high-power broad electron beams, metal vapor to be deposited on the substrates and beams of fast molecules. The second group may be applied only to conductive substrates. The substrates are immersed in the plasma of glow discharge with electrostatic confinement of electrons and ions from the plasma sputter quite homogeneously the water-cooled targets made of titanium sheets, which cover all the walls of the vacuum chamber. Losses of the target material and droplets are totally excluded.