FLUCTUATIONS OF OPTICAL AND ELECTRICAL PARAMETERS AND THEIR CORRELATION OF MULTIPLE-QUANTUM-WELL InGaAs/InP LASERS

摘要

Low-frequency noise characteristics of Fabry-Perot (F-P) and distributed feedback, ridge-waveguide and buried-heterostructures InGaAsP/InP multiple-quantum-well lasers investigation has been carrier out. Mode hopping effect characteristic for F-P laser operation is caused by carrier gathering in barrier and cladding layers, and intensive optical and electrical noise during mode hopping is related with recombination in these layers. Defective laser diodes structures can be revealed by noise characteristic investigation, especially the correlation factor is more informative at threshold.