Design and Calculation Characteristics of A Novel Diode-Pumped Long Wavelength Vertical-External-Cavity Surface-Emitting Semiconductor Laser

摘要

A novel design of diode-pumped long wavelength vertical-external-cavity surface-emitting semiconductor laser with GaInNAs/GaAs multiple quantum wells at 1.3μm as an active region optically pumped by 980nm diode laser is proposed in this paper. The device design realizes the integrating diode-pumped lasers with long wavelength vertical-cavity surface-emitting laser structure, drawing on the advantages of both. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells is obtained from the calculation results, and the calculation results also predict high output power (>500mW) in this kind of device structure. Finally the thermal characteristic is also considered.