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Evaluation of critical current density based on percolation model in carbohydrate doped MgB_2 wires

机译:基于碳水化合物掺杂MGB_​​2电线渗透模型的临界电流密度评价

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The low field region is somewhat different. The critical current density at low field is mostly determined by the pinning force maximum and the obtained F_m listed in Table I is quite reliable. Consistent with the conventional argument concerning the size dependence of the grain boundary pinning, there is a clear enhancement in the pinning at low sintering temperature for both doped and un-doped samples. On the other hand, contrary to the usual discussion on carbon doping in MgB_2, the pinning force did not increase, but decreased. Comprehensive study has reported in our previous work.
机译:低场区域有些不同。低场处的临界电流密度主要由钉扎力最大决定,表I中列出的获得的F_M是非常可靠的。与关于晶界钉扎的尺寸依赖性的传统参数一致,在掺杂和未掺杂样品的低烧结温度下钉扎在钉扎中存在明显的增强。另一方面,与MGB_2中的碳掺杂的通常讨论相反,钉扎力没有增加,但减少。综合研究报告了我们以前的工作。

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