CARRIER TRAPPING AND THERMAL EFFECTS IN GaN-BASED HIGH-ELECTRON MOBILITY TRANSISTORS

摘要

The effects of charge trapping and thermal effects, caused by self-heating, is studied on DC and RF performance of AlGaN/GaN high electron mobility transistors (HEMTs). Thermal resistance and thermal time constant of GaN-based HEMTs, grown on different substrates by RF plasma-assisted molecular beam epitaxy (MBE), were estimated using a simple analytical solution. The thermal resistance was also extracted experimentally from current transient and by gate-diode technique.