PROCESS DEPENDENCE OF NEGATIVE BIAS TEMPERATURE INSTABILITY IN PMOSFETS

机译：在PMOSFET中处理负偏置温度不稳定性的处理

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Several process steps have been implemented in the advanced technology for channel length smaller than 0.18 um to improve the performance. These technology steps impact the device reliability. In this paper, the process dependence of NBTI for PMOSFETs in advanced technologies is studied in detail, which includes the NO anneal and the impact of fluorine.

机译：在先进技术中实现了几个过程步骤，用于小于0.18μm以提高性能的通道长度。这些技术步骤会影响设备可靠性。本文研究了NBTI对先进技术中PMOSFET的过程依赖性，详细研究了，包括无退火和氟的冲击。

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《the International Symposium of Electrochemical Society》|2003年||共6页
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Sharad Prasad; Erhong Li; Lesly Duong; Electrochemical SocietyInc.; Proceedings v.2003-02;
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中图分类第Ⅳ族非金属元素及其无机化合物;
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1. Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities [J] . Christelle Benard, Gaeetan Math, Pascal Fornara, Microelectronics reliability . 2009,第9a11期

机译：负偏置温度不稳定性导致的各种工艺步骤对PMOSFET可靠性的影响
2. Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics [J] . Hyojune Kim, Yonghan Roh Solid-State Electronics . 2014,第jana期

机译：体偏置对具有SiON栅极电介质的pMOSFET中负偏置温度不稳定性的影响
3. Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability [J] . WANG Hong-Juan, HAN Gen-Quan, LIU Yan, 中国物理快报：英文版 . 2014,第005期

机译：具有低温Si2H6钝化功能的锗PMOSFET具有高空穴迁移率和出色的负偏置温度不稳定性
4. PROCESS DEPENDENCE OF NEGATIVE BIAS TEMPERATURE INSTABILITY IN PMOSFETS [C] . Sharad Prasad, Erhong Li, Lesly Duong Electrochemical Society(ECS) Meeting and International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films VII; 20030428-20030502; Paris; FR . 2003

机译：PMOSFET的负偏置温度不稳定性的过程依赖性
5. Atomic-scale defects involved in the negative bias temperature instability in silicon dioxide and plasma-nitrided oxide based pMOSFETs. [D] . Campbell, Jason P. 2007

机译：二氧化硅和基于等离子体氮化的氧化物的pMOSFET的负偏置温度不稳定性所涉及的原子尺度缺陷。
6. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs [O] . H. Hussin, N. Soin, M. F. Bukhori, -1

机译：栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
7. Characterization of negative bias temperature instability and lifetime prediction for pMOSFETs [O] . Ji Z 100

机译：表征pmOsFET的负偏压温度不稳定性和寿命预测

PROCESS DEPENDENCE OF NEGATIVE BIAS TEMPERATURE INSTABILITY IN PMOSFETS

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