Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

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• 来源
  《中国物理快报：英文版》 |2014年第5期|191-194|共4页
• 作者

  WANG Hong-Juan; HAN Gen-Quan; LIU Yan; YAN Jing; ZHANG Chun-Fu; ZHANG Jin-Cheng; HAO Yue;

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• 作者单位

  Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education,College of Optoelectronic Engineering, Chongqing University, Chongqing 400044;

  Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education,College of Optoelectronic Engineering, Chongqing University, Chongqing 400044;

  Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education,College of Optoelectronic Engineering, Chongqing University, Chongqing 400044;

  Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education,College of Optoelectronic Engineering, Chongqing University, Chongqing 400044;

  Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics,Xidian University, Xi'an 710071;

  Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics,Xidian University, Xi'an 710071;

  Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics,Xidian University, Xi'an 710071;

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• 原文格式 PDF
• 正文语种 eng
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