NOVEL GERMANIUM TECHNOLOGY AND DEVICES FOR HIGH PERFORMANCE MOSFETS AND INTEGRATED ON-CHIP OPTICAL CLOCKING

摘要

For the first time, we have successfully demonstrated the use of a high-κ gate dielectrics material ZrO_2, for CMOS applications on pure germanium substrate. A near room temperature UV ozone oxidation technique has been developed for the formation of ZrO_2. We have achieved excellent C-V characteristics with hysteresis of 1.5 mV and a capacitance-based equivalent SiO_2 thickness (t_(ox,eq)) of about 6-10 A. A novel low thermal budget ( ≤ 400°C) germanium MOS process with high-κ gate dielectric and metal gate electrode has been demonstrated. For the first time, self-aligned p-type surface-channel Ge MOSFETs with ZrO_2 gate dielectric and platinum gate electrode are demonstrated in a conventional MOSFET structure with twice the low-field hole mobility than that for Si MOSFETs. The surface passivation makes it possible to fabricate metal-Ge-metal (MSM) integrated optical detectors for optical interconnect applications.