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Cost effective lithography approaches for ASIC circuits

机译:ASIC电路的成本效益光刻方法

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It is suggested that the high cost of mask sets for 90nm and below technologies may restrict the application of technologies to a handful of high volume chips. Most of the cost for mask production is a result of the increased time to write and inspect (including defect disposition) a mask due to the large files that are created prior to mask writing. Stringent mask specifications needed for low k factor imaging drive protracted and costly yield learning curves for a mask maker. The cost of different steps in the flow from design tape-out to final wafer test are analyzed and it is shown that limiting the reticle field size on critical layers could reduce net costs. The net die cost is lower as long as the number of processed wafers stays below a cutoff number. Costs can be further decreased by reducing the overall "figure count" (and hence writing time) for an ASIC chip by restricting the amount of OPC done on critical layers.
机译:建议,90nm和以下技术的掩模组的高成本可能会将技术应用于少数大容量芯片。掩模生产的大多数成本是由于在屏蔽写入之前创建的大文件而增加的时间增加(包括缺陷处理)掩码的时间。低k因子成像驱动器所需的严格掩模规范延伸和昂贵的面罩制造商的昂贵的学习曲线。分析了从设计带输出到最终晶片试验的流动中不同步骤的成本,并显示了限制关键层上的掩模版场大小可以降低净成本。只要处理的晶片数量低于截止值,净模具成本就较低。通过限制在临界层对关键层所做的OPC的量来减少ASIC芯片的整体“数量”(并因此写入时间),可以进一步降低成本。

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