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CHEMICALLY COATED BUFFER LAYERS DEPOSITED ON ROLLED NI SUBSTRATES FOR HTS COATED CONDUCTORS

机译:用于HTS涂覆导体的卷起的轧制Ni基材上的化学涂层缓冲层

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For fabricating long length Yba{sub}2Cu{sub}3O{sub}(7-x) (YBCO) coated conductors with high critical current density (J{sub}c), easily scalable processing techniques for buffer layers are very important. In this paper, we report on the deposition of buffer layers using dip and spin coating on nickel substrates. The substrates were fabricated using the RABiTS approach. The solution was prepared from metal-organic precursors and was deposited on the Ni substrates using the dip and spin coating techniques. The films were annealed at 900°C-1150°C for 2 hours under 5% Ha-Ar gas flow. X-ray diffraction (XRD) of the buffer layers on the Ni tape shows a good out of plane alignment. The pole figure indicates a single cube-on-cube texture, and SEM observations reveal a continuous, dense and crack-free microstructure for the chemically coated buffers. These results offer the potential of further manufacturing coated conductors with high current density.
机译:用于制造长度YBA {SUB} 2CU {SUB} 3O {SUB}(7-X)(YBCO)具有高临界电流密度(J {SUB} C)的涂覆导体,用于缓冲层的容易可扩展的处理技术非常重要。在本文中,我们在镍基材上使用浸渍和旋涂沉积缓冲层的沉积。使用兔子方法制造基材。用金属 - 有机前体制备溶液,并使用浸渍和旋涂技术沉积在Ni底物上。将薄膜在900℃-1150℃下退火2小时,在5%HA-Ar气流下。 Ni磁带上缓冲层的X射线衍射(XRD)显示出平面对准的良好。极值图表明了单个立方体纹理,SEM观察显示化学涂覆缓冲液的连续,致密和无裂缝的微观结构。这些结果提供了具有高电流密度的进一步制造涂层导体的电位。

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