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A NEW APPROACH FOR INVESTIGATION OF STRUCTURAL PROPERTIES OF INDIUM TIN OXIDE THIN FILM

机译:一种新方法,用于氧化铟锡薄膜结构性能

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摘要

It has been proved that the optical and electrical properties of indium tin oxide (ITO) thin film is strongly structural dependent, with the structural properties of the film varies for different film preparation condition. The ITO film has been prepared by RF sputtering and its transmission and conductivity have been optimized by annealing in the atmosphere of N{sub}2 at 400°C. A theoretical model based on the variation of electrical and optical band gap of the film for different preparation condition is developed and its validity has been verified by experimental results.
机译:已经证明,氧化铟锡(ITO)薄膜的光学和电性能依赖性强,膜的结构性能变化,用于不同的薄膜制备条件。 ITO薄膜已经通过RF溅射制备,并且通过在400℃下的N {Sub} 2的气氛中退火来优化其传输和电导率。开发了基于用于不同制剂条件的薄膜电气和光学带隙的变化的理论模型,并通过实验结果验证了其有效性。

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