Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/Al_2O_3 heterostructure lasers

摘要

The influence of layer thickness, heterostructure design, optical confinement factor and spontaneous emission efficiency on laser parameters of GaN based quantum well optically pumped lasers is studied in wide spectral (373-470 nm), temperature (77-600 K) and excitation intensity (10~2 - 3 10~6 W/cm~2) regions. The laser threshold enhancement from 70 kW/cm~2 for the 421 nm operating laser to 900 kW/cm~2 for the 469.5 nm laser leads to the reduction of highest operation temperature of the laser from 585 K for the 421 nm laser to 295 K for the 469.5 nm laser with increasing operating wavelength. As a rule the far field pattern of the laser emission consists of two light spots localized at positive and negative angles of 30-50°. The laser spectra structure in the far-field of the SQWs and MQWs with low thickness of the active layers depended on the registration angle. The spatial distribution of the laser light in the far-field consisting of transverse and leaky modes was calculated and compared with the experimental results. Calculations of the optical confinement factor and the electromagnetic field distribution inside and outside of the heterostructures showed that the MQW lasers operate in the high order transverse mode regime. The spectral-angular distribution of the emission of the SQW and MQW lasers with low active layer thickness is due to the leaky mode formation.