High-Performance AlGaInAs/InP 14xx-nm Semiconductor Pump Lasers for Optical Amplifications

摘要

This paper reviews recent progress of high-power 14xx-nm pump lasers using AlGalnAs/InP material. This material has superior temperature characteristics to conventional InGaAsP/InP. As a result, it is more suitable for high current and high efficiency operations as well as uncooled applications for the high power 14xx-nm lasers, which are required for advanced optical amplifications. The laser module consists of a laser chip coupled to a fiber lens and mounted on a thermoelectric cooler in a standard butterfly package. The wavelength of the laser can be stabilized with an external fiber Bragg grating (FBG). We have demonstrated a maximum module fiber output power of 550mW at 1.75A and characteristic temperatures of T_0 = 99K and T_1 = 348K over a range of chip heat-sink temperatures from 15°C to 50°C. To the best of our knowledge, these are the highest efficiency and temperature characteristics from a single-mode 14xx-nm semiconductor laser module capable of over 0.5W fiber output power. At a chip heat-sink temperature of 70°C, a power of 360mW was obtained for a laser module with FBG, which is the highest reported to date for any wavelengths from 1300nm to 1600nm and would enable uncooled applications of the 14xx-nm lasers in the future.