RF on-chip passive components, inductors, capacitors and resistors, have been fabricated with advanced Cu interconnect technology, which is compatible with nowadays 0.18μm CMOS backend process. The Q-values, with the lowest value of 11, for a set of inductors with inductance from 0.4 nH to 11 nH have been reported on low resistivity silicon substrates. MIM and MIMIM structure for on-chip capacitors have been studied. 1.75fF/μm{sup}2 capacitance has been achieved with MIMIM capacitors. Very high uniformity for inductors on wafers and low leakage current for capacitors can also be achieved in our fabrication.
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