THE PACKAGING OF ICs: A NEW APPROACH

摘要

The basic mechanical properties of monocrystal silicon and materials used at fabrication of ICs package was considered. Set that in terms of the properties the silicon is on a par with another ICs package materials. The application of the ther-momigration processes both for making through conductive channels in silicon substrates and for joining of the substrates among themselves by means of an intermediate metallic layer also was considered. It was shown that such application of thermomigration allows classifying the packaging of ICs as a batch method, which can be integrated into a blanket technological process of fabrication of microelectronical devices. The ICs package had absolute leak-proofness because of its monolithic construction in which package header, cover and leads are made from monocrystal silicon.