Study of Post Deposition Annealing for C-axis Orientation of BaM Thin Film Deposited on Amorphous Aluminum Oxide (a-AlO)

摘要

Barium ferrite (BaM) thin films possessing high anisotropy field, good mechanical strength and chemical stability arc attractive candidate for the high density perpendicular recording material. But c-axis orientation, which is prime concern for the perpendicular recording, requires substrate temperature in a range of 500-600 deg C. This substrate temperature is strongly recommended to decrease . Post deposition annealing is one of the alternatives to reduce the necessity of in sin, substrate heating. In this study as-deposited amorphous BaM thin films were annealed at different temperature and time. This study was also involved to find out the different annealing factors.