FORMATION OF OXIDE SUPERCONDUCTING THIN FILM WITH C-AXIS IN-PLANE ORIENTATION AND A-AXIS ORIENTATION AND BASE BODY THEREFOR

摘要

PURPOSE: To obtain an oxide superconducting thin film excellent in crystallinity and surface smoothness by forming a specific buffer layer on an oxide single crystal base body followed by forming thereon an oxide superconducting thin film. ;CONSTITUTION: This superconducting thin film is obtained by forming a buffer layer consisting of an oxide single crystal thin film with rectangular surface lattice on an oxide single crystal base body followed by forming thereon an oxide superconducting thin film. By this method, the objective oxide superconducting thin film with c-axis in-plane orientation and a-axis orientation excellent in crystallinity and surface smoothness can be formed. Therefore, SIS tunnel junction is also made possible. Use of a multiple oxide having GdFeO₃ structure as the buffer layer makes the objective oxide superconducting thin film with more excellent crystallinity and surface smoothness able to be formed because the GdFeO₃ structure resembles the crystal structure of the aimed thin film.;COPYRIGHT: (C)1996,JPO