Center for Integrated Systems, Stanford University, Stanford, CA 94305, USA

摘要

To investigate electrical activation and dopant diffusion behavior, heavily boron (B) implanted (UB 2.0 keV 4.0 x 1015 cm"2) silicon wafers were annealed using a novel millisecond flash anneal and/or a conventional tungsten halogen lamp-based rapid thermal anneal (RTA). Sheet resistance and B depth profiles were measured using a four point probe and secondary ion mass spectroscopy (SIMS) before and after annealing. Wafers which were "spike" annealed or "soak" annealed by the RTA system showed electrical activation as well as a significant B diffusion (15~40 nm) after annealing depending on the annealing conditions. In wafers annealed only by the flash annealing system, the electrical activation of B implanted silicon improves as flash power increases at a given preheat temperature without B diffusion. Previously "spike" annealed and "soak" annealed wafers showed additional electrical activation after additional flash annealing without additional B diffusion.