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Tetragonal plus displacive ferroelectric distortion in thin SrTiO-3 films grown on Si(001)

机译:在Si(001)上生长的薄SRTIO-3薄膜中的四边形加上流离失所的铁电变形

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A ferroelectric crystal is one that possesses a net dipole moment even in the absence of an external electric field. In order for this spontaneous polarization to arise, the center of negative charge of the crystal must displace from the center of positive charge. Accompanying this net displacement of charge there is typically a macroscopic distortion of the unit cell dimensions. Consequently, there exists an intrinsic relationship between strain and ferroelectricity that may be exploited in thin-film growth. Here we combine x-ray absorption fine-structure spectroscopy with x-ray diffraction to study the local structure of thin SrTiO-3 films grown pseudomorphically on Si(001). Our data indicate that below a critical thickness of ~ 80 A, the in-plane compressive strain imposed on the SrTiO-3 layers by the Si substrate results in a tetragonal plus displacive ferroelectric distortion in the films at room temperature. This study therefore suggests the existence of a Curie "thickness" for strained-layer perovskite growth.
机译:即使在没有外部电场的情况下,铁电晶体也具有净偶极矩的晶体。为了使这种自发极化出现,晶体的负电荷中心必须从正电荷的中心移位。伴随该净电荷的净位移通常存在单位细胞尺寸的宏观变形。因此,存在可在薄膜生长中利用的应变和铁电性之间的内在关系。在这里,我们将X射线吸收细结构光谱与X射线衍射相结合,研究薄的SRTIO-3膜在Si(001)上生长的薄SRTIO-3膜的局部结构。我们的数据表明,低于〜80a的临界厚度,Si衬底施加在SRTIO-3层上的面内压缩应变导致四边形加上薄膜在室温下的位移铁电变形。因此,该研究表明,用于应变层钙钛矿生长的居里“厚度”的存在。

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