首页> 外文会议>International Symposia on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II, and Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing >Homogeneous and surface chemistry of the chemical vapor deposition of aluminosilicates from metal chloride mixtures in CO_2 and H_2
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Homogeneous and surface chemistry of the chemical vapor deposition of aluminosilicates from metal chloride mixtures in CO_2 and H_2

机译:CO_2和H_2中金属氯化物混合物的铝硅酸盐的化学气相沉积的均相和表面化学

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Detailed homogeneous and surface reaction mechanisms that describe the chemistry of the chemical vapor codeposition of silica, alumina, and aluminosilicates from mixtures of silicon tetrachloride or methyltrichlorosilane (MTS), aluminum trichloride, carbon dioxide and hydrogen are formulated. A detailed mechanism for the generation of H_2O, OH and other O-H species through the water-gas shift reaction is included in the homogeneous model. The predictions of the mathematical model are compared with experimental data obtained in our laboratory in a hot-wall CVD reactor of tubular geometry. The model is found to be capable of predicting most of the behavior patterns observed in the experiments, including those of the enhancement of the deposition rate of silica in the presence of AlCl_3 in the feed, the suppression of the incorporation rate of silica in the deposit in the presence of silane species in the feed, and the higher rate of codeposition and deposition rate of silica from MTS.
机译:制定了描述二氧化硅,氧化铝和甲基三氯硅烷(MTS),三氯化铝,二氧化碳和氢气的混合物的二氧化硅,氧化铝和铝硅酸盐的化学蒸汽密码沉积化学化学性化学的详细均匀和表面反应机制。通过水煤气变换反应产生H_2O,OH和其他O-H种的详细机制包括在均质模型中。将数学模型的预测与我们在管状几何形状的热壁CVD反应器中获得的实验室中获得的实验数据进行了比较。发现该模型能够预测在实验中观察到的大多数行为模式,包括在饲料中存在alcl_3在饲料中的二氧化硅的沉积速率的增强的那些,抑制沉积物中二氧化硅的掺入率在饲料中存在硅烷种类,以及来自MTS的二氧化硅的较高沉积率和沉积速率。

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