Modeling of a silane LPCVD process used for microelectronics and MEMS fabrication

摘要

This paper investigates the LPCVD of undoped polysilicon thin films from silane for application to Micro-Electro-Mechanical Systems (MEMS). A previously published mechanism is refined and validated based on experimental data from a commercial LPCVD reactor. Two reactor scale models with different levels of complexity are used to validate the mechanism. Once verified, the mechanism is applied to both reactor and feature scale models to aid in the design of more efficient processes for MEMS fabrication. At the reactor scale, the effects of altering gas inlet and wafer loads on deposition rate uniformity are studied. Using boundary conditions supplied by the reactor scale model, feature scale models are used to develop design rules for assessing the operability of various shapes for MEMS.