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Wafer Level Electroless Nickel/Gold ― Plating on Copper Pad Metallization A Solution for Wire Bonding and Flip Chip Technology

机译:晶圆电平无电镀镍/镀金铜焊盘金属化电线键合和翻转芯片技术的解决方案

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Electroless Nickel/Gold under bump metallization is becoming a state of the art - accepted technology for under bump metallization for Aluminum pad wafers. On these wafer types, the wire bonding process is performed directly on the Aluminum. For flip chip bumping processes, an additional wettable under bump structure is required, since solder does not wet directly on the Aluminum. Besides the sputtering techniques consisting of Chromium/ Copper or Titanium/Tungsten layers in combination with Copper and other metals, electroless Nickel/Gold is becoming a low cost alternative implemented in several products world wide. The new wafer types coming onto the market with Copper pads are causing basic evolution and revolution in wire bonding and flip chip technology. Wire bonding directly on Copper pads is not possible or very difficult with the existing standard wire bond equipment and processes. So, an additional alternative metallization step has to be done on these wafers in order to make them suitable for wire bonding. Here, electroless Nickel/Gold offers a unique chance to provide a wire bondable surface for Copper pad wafers. Electroless Nickel/Gold is already used in CSP's, BGA's as metallization on the printed circuit boards. The implementation of this process on wafer level offers unique solutions to obtain a homogenous metallization system. This will provide optimal reliabilities on all interfaces of wire bond technology. This means, the bond pad on the IC and the bond pad on the substrate. Additional, the Nickel/Gold UBM can be used as a structure wetable for solder bumps and for flip chip technology. This paper presents the process flow and the bonding results for this unique metallization which offers a roadmap to further cost reduction for both - flip chip and wire bonding technology.
机译:凹凸金属化下的化学镀镍/金正在成为铝垫晶片的凸块金属化下的最新技术。在这些晶片类型上,引线键合工艺直接在铝上进行。对于倒装芯片凸块工艺,需要在凸块结构下进行额外的润湿性,因为焊料不会直接湿在铝上。除了由铬/铜或钛/钨层组成的溅射技术以及与铜和其他金属组合,化学镀镍/金正成为全球几种产品实施的低成本替代品。使用铜垫的市场上的新晶圆类型导致导线键合和倒装芯片技术的基本演化和革命。对于现有的标准线键合设备和工艺,直接在铜焊盘上直接粘合。因此,必须在这些晶片上进行另外的替代金属化步骤,以使它们适合于引线键合。在这里,化学镀镍/金提供了为铜垫晶片提供有线可接收表面的独特机会。化学镀镍/金已用于CSP的BGA,作为印刷电路板上的金属化。在晶圆级实施此过程提供了独特的解决方案,以获得均匀的金属化系统。这将为导线技术的所有界面提供最佳的可靠性。这意味着,IC上的键合焊盘和基板上的键合焊盘。附加额外的镍/金UBM可用作焊料凸块和倒装芯片技术湿润的结构。本文介绍了这种独特金属化的过程流程和键合结果,该方法为倒装芯片和引线键合技术进行了进一步成本降低的路线图。

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