Failure modes and FEM analysis of power electronic packaging

摘要

The development of power electronics technology is driven by the insatiate demand to control electrical power. The new power electronics devices make the volume of the converters a reduction of three to four orders of magnitude compared to their mercury arc predecessor. And the turn-on and turn-off time has decreased from the millisecond region to the microsecond region and even nanosecond depending on power level. The power range commanded by converters now extends from micro-VA to several hundreds of MVA. Among the new power devices, IGBT (insulated gate bipolar transistor) devices are getting more acceptances and increasingly used in traction application such as locomotive, elevator, tram and subway. Thus the long-term reliability of IGBT is highly demanded in this paper the failure modes of power electronics devices especially IGBTs are reviewed. A FEM analysis of a multilayered IGBT packaging module under cyclic thermal loading is presented.