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Reaction Front Induced Roughness in Developed Chemically Amplified Photoresists

机译:在发育化学扩增的光致抗蚀剂中的反应前诱导粗糙度

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The effect of line edge roughness(LER)is an increasingly important problem as lithographic feature dimensions shrink to the sub-100 nm level.Previous experiments have demonstrated several key material properties that influence LER,such as incompatibility between protected and deprotected components [1],casting solvents,base additives and photoacid generators [2],as well as process conditions such as X-ray or UV dosage to mask and post-exposure bake protocols [3].
机译:线边缘粗糙度(LER)的效果是一种越来越重要的问题,因为光刻特征尺寸缩小到亚100nm水平。另外的实验表明了影响LER的几个关键材料特性,例如受保护和脱保护的部件之间的不相容性[1] ,铸造溶剂,碱添加剂和光酸发生器[2],以及X射线或UV剂量的工艺条件和掩模后烘焙方案[3]。

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