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THE EVOLUTION OF SURFACE ROUGHNESS OF COPPER ELECTRODEPOSITION DIRECTLY ON ULTRA-THIN AIR EXPOSED TaN LAYERS

机译:直接铜电沉积表面粗糙度的演变直接在超薄空气暴露棕褐色层

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Surface roughness of both seed layers and electrodeposited copper for ULSI interconnects affect adhesion and fracture characteristics of the electrodeposited plate. In this program experiments were performed on copper, deposited from complexing citrate baths, directly onto TaN barrier layers, as a function of copper thickness (as measured by plating time) and subsequent annealing. It has been shown that surface roughness increase with increasing plate thickness, reaching a constant roughness at a thickness of about 350 nm. Annealing, in order to enhance plate resistivity, has no appreciable effect on surface roughness.
机译:用于ULSI互连的种子层和电沉积铜的表面粗糙度影响电沉积板的粘附性和断裂特性。在该节目中,对铜的铜进行实验,沉积在柠檬酸盐浴中,直接在TaN阻挡层上,作为铜厚度(通过电镀时间测量)和随后的退火。已经表明,表面粗糙度随着板厚增加而增加,厚度为约350nm的厚度达到恒定的粗糙度。退火,为了提高板电阻率,对表面粗糙度没有明显的影响。

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