InGaAs tunnel FETs are now being developed for high-performance, low-power, low-subthreshold-swing logic [1]. The low bandgap and low carrier effective masses in In0.53Ga0.47As should enable high-current-density, even 200 mA/μm2 with internal fields of 4 MV/cm created by abrupt carrier profiles at the limits of dopant solubility, 2 × 1020 cm-3 for C [2], and 6 × 1019 cm-3 for Si [3]. Here, molecular beam epitaxy (MBE) is used to grow heavily-doped In0.53Ga0.47As junctions. Secondary ion mass spectroscopy (SIMS) is used to measure the dopant profiles, these profiles are used to simulate the expected energy band diagrams, and current-voltage characteristics (I–V) are used to characterize the junctions.
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机译：目前正在开发Ingaas隧道FET，用于高性能，低功耗，低亚阈值 - 摆动逻辑[1]。在 0.53 GA 0.47 中的低带隙和低载体有效质量应使得高电流密度，甚至是200mA /μm 2 由掺杂剂溶解度限制的突然载体型材产生的4mV / cm的内部场，2×10 20 -3 用于c [2]，6×10 19 cm -3 for si [3]。这里，分子束外延（MBE）用于在 0.53 GA 0.47 中生长重掺杂。二次离子质谱（SIMS）用于测量掺杂剂型材，这些轮廓用于模拟预期的能带图，电流 - 电压特性（I-V）用于表征结。
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