Projections of Schottky Barrier Source-Drain Gallium Nitride MOSFET Based on TCAD Simulation and Experimental Results

摘要

The material properties of Gallium Nitride (GaN) make it an ideal candidate for high frequency, high temperature and high power electronic devices. A GaN MOSFET structure is advantageous over MESFET and HFET structures due to its decreased gate leakage and low power consumption; both are key factors in high power and high frequency applications. Several challenges are present in the construction of such a device; one is the necessity of a highly doped source and drain regions. This paper details the use of nickel Schottky barriers as the source and drain for a Schottky Barrier GaN MOSFET (SB-MOSFET).