Electrical properties of nanoscale TiSi{sub}2 islands on Si

摘要

Nanoscale TiSi{sub}2 islands are formed by elect1on beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800-1000°C). The typical island sizes were ～10 nm. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.