Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates

摘要

The combination of self-organized growth on high-index substrates with lithographic patterning and atomic hydrogen assistance allows the fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior structural and electronic properties qualitatively from that on low-index ones thus producing quantum wire and quantum dot structures which fulfill the stringent criteria on the geometrical features to be met for useful devices.