Uniformk quantum wrie and quantum dot arrays by atomic hydrogen assisted MBE on patterned hgih-index substrates: role of atomic hydrogen in natural self-faceting

摘要

The feasbility of combining natural self-faceting in atomic hydrogen assisted MBE with patterned growth for the formation of novel quantum wire and quantum dot array with superior structural and electronic properties is highlighted. From the pronounced modification of teh surface morphology of high-index planes a model for the influence of atomic hydrogen on epitaxial growth is develoepd. The model is based on an enhanced adatom incorporation at step-down sites by lowering the energy barrier at step edges to promate step bunching. This is the key aspect of the study presented here.