Advanced W-CMP Process Development for CMOS Logic Fabrication at 28mn Technology Node and Beyond

摘要

Tungsten has been widely used for the formation of contact via connecting to metal lines in IC fabrication. In this application, pre-metal layer was patterned by litho and etch process followed by Tungsten (W) deposition by CVD and finally polished by chemical mechanical planarization (CMP) process to remove the excess metal outside via holes [1], [2].