Cu thin films have been deposited on TiN/SiOo/Si multi-layered structure in order to investigate electrical and diffusion barrier properties of the newly developed Cu metallization process technology which will be applicable in ultra-large scale integrated circuits, The Cu films have been deposited by sputtering, and the TiN films have been formed by using a flow modulation chemical vapor deposition (FMCVD) technique that employed TiCU and NH3 as precursors. The electrical sheet resistance of the Cu films has been measured to be about 30 for the as-deposited samples, but the sheet resistance has been drastically reduced after the annealing process due to the growth of the Cu grain. The FMCVD processes for the TiN formation has turned out to be effective in protecting the Cu diffusion to the silicon oxide. The results indicate that the higher flow modulation cycle and Ar purge time during the TiN layer growth makes the better diffusion barrier property.
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