(Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications

摘要

We have investigated the crystalline and electronic properties of group-IV semiconductor alloy thin films of Ge_(1-x)Sn_x and Ge_(1-x-y)Si_xSn_y. These semiconductor materials promise effective energy band engineering with type-I band alignment. Also, we have investigated the optoelectronic properties of Ge_(1-x-y)Si_xSn_y/Ge_(1-x)Sn_x/Ge_(1-x-y)Si_xSn_y double heterostructure with measuring photoluminescence spectroscopy.