Fabrication of Si/graphene/Si Double Heterostructures by Semiconductor Wafer Bonding towards Future Applications in Optoelectronics

摘要

A Si/graphene/Si planar double heterostructure has been fabricated by means of semiconductor wafer bonding. The interfacial mechanical stability and interlayer electrical connection have been verified for the structure. To the best of our knowledge, this is the first realization of a monolayer-cored double heterostructure. In addition, a double heterostructure with bilayer graphene has been prepared for bandgap generation and tuning by application of a bias voltage. These structures move towards the realization of versatile graphene optoelectronics, such as an electrically pumped graphene laser. Our Si/graphene/Si double heterostructure is positioned to form a new basis for next-generation nanophotonic devices with high photon and carrier confinements, earth abundance (C, Si), environmental safety (C, Si), and excellent optical and electrical controllability by silicon clads.