Nanocontact Epitaxy of Thin Films on Si Substrates Using Nanodot Seeds Fabricated by Ultrathin SiO_2 Film Technique

摘要

We developed a new technique for heteroepitaxial growth on Si substrates, we call nanocontact epitaxy. In this technique, elastically strain-relaxed nanodots (NDs) formed by ultrathin SiO_2 film technique are used as seed crystals for film growth. Using this technique, we grew high quality Ge thin films on Si(001) substrates where there is 4% lattice mismatch. Furthermore, we succeeded in the epitaxial growth of high quality GaSb thin films on Si(001) substrates with large lattice mismatch (～12%). We observed strong photoluminescence from these thin films. This demonstrated the nanocontact epitaxy is promising as a new heteroepitaxial growth technique applicable to large lattice mismatch system.