Process Strategy for Built-in Reliability of Cu Damascene Interconnect System for 0.13um-Node and Beyond

摘要

As the shrinkage of future sizes and the introduction of low-k material,the reliability issues in Cu metallization have become more serious.There are three reliability issues:EM (Electro-migration),SM(Stress-migration) and TDDB (Time-dependent dielectric breakdown),and it is important to solve these issues at the same time.In this report,we describe the process design strategy to achieve built-in reliability of these three issues for leading edge Cu damascene interconnect system.