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NANO-STRUCTURES OF GROUP-III NITRIDES BY MOCVD USING MOLECULAR PRECURSORS

机译:MOCVD使用分子前体的III族氮化物的纳米结构

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Performance advantages and cost benefits are the driving forces behind the adoption of any newly maturing technology.GaN,in this respect,has come a long way in establishing itself as commercially viable technology with promising applications in UV and visible optoelectronics (1-2).The recent research trend for miniaturisation by developing one-dimensional structures such as nanowires,nanorods and nanopillars,of semiconducting materials is on the frontiers.GaN nanostructures are the building blocks for nano-devices (3) which are synthesised by different methods such as laser assisted catalytic growth,template assisted synthesis (4),sublimation (5),direct reaction of Ga and NH_3 (6) and MOCVD (2).
机译:性能优势和成本效益是采用任何新成熟技术的驱动力。在这方面,在这方面,在紫外线和可见光电子(1-2)中具有有前途的应用(1-2),这一方面已经成为商业上可行技术的长途。通过开发半导体材料如纳米线,纳米棒和纳米粒子如纳米线,半导体材料的一维结构的近期研究趋势在边缘。纳米结构是用于纳米器件(3)的构建块,其由不同方法(例如激光)合成辅助催化生长,模板辅助合成(4),升华(5),Ga和NH_3(6)和MOCVD(2)的直接反应。

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