Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

J.R. Creighton; W.G. Breiland; D.D. Koleske; G. Thaler; M.H. Crawford

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Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

机译：用于III族氮化物MOCVD温度测量和控制的发射率校正中红外高温法

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We report a pyrometer that operates at a mid-infrared wavelength range (7-8 μm), where sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also employs a novel "self-reflectance" method of emissivity correction, whereby th

机译：我们报告了一种高温计，该高温计在中红外波长范围（7-8μm）下运行，其中蓝宝石衬底是不透明的，反应气体是透明的。高温计还采用了一种新颖的“自反射”发射率校正方法，从而

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来源
《Journal of Crystal Growth》 |2008年第6期|p.1062-1068|共7页
作者
J.R. Creighton; W.G. Breiland; D.D. Koleske; G. Thaler; M.H. Crawford;
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作者单位

Sandia National Laboratories, P. O. Box 5800, MS-0601, Albuquerque, NM 87185-0601, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A2. Metalorganic chemical vapor deposition; A2. Metalorganic vapor phase epitaxy; A3. Pyrometry; A3. Organometallic vapor phase epitaxy; B1. Indium gallium nitride; B1. Gallium nitride; B1. Indium nitride;

机译：A2。金属有机化学气相沉积;A2。金属有机气相外延;A3。高温法;A3。有机金属气相外延;B1。氮化铟镓;B1。氮化镓;B1。氮化铟;

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1. Emissivity-correcting near-UV pyrometry for group-Ⅲ nitride OMVPE [J] . J.R. Creighton, D.D. Koleske, C.C. Mitchell Journal of Crystal Growth . 2006,第2期

机译：Ⅲ族氮化物OMVPE的发射率校正近紫外高温法
2. Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire [J] . Krost A, Schulze F, Dadgar A, Physica status solidi, B. Basic research . 2005,第13期

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3. Kinetics of Metal Organic-Ammonia Adduct Decomposition:Implications for Group-III Nitride MOCVD [J] . J.Randall Creighton, George T.Wang The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory . 2005,第46期

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4. Application of Emissivity Compensated Pyrometry for Temperature Measurement and Control During Compound Semiconductors Manufacturing [C] . International temperature symposium . 2003

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5. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers [D] . Al Balushi, Zakaria Y. 2017

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7. Nitride Semiconductor Surfaces. Effect of Low-temperature Deposited Layer on the Growth of Group-III Nitrides on Sapphire. [O] . Hiroshi AMANO, Isamu AKASAKI 2000

机译：氮化物半导体表面。低温沉积层对蓝宝石族氮化族生长的影响。
8. Group-III Nitride Etch Selectivity in BCl(3)/Cl(2) ICP Plasmas;The Material Research Society Internet Journal of Nitride Semiconductor Research [R] . Abernathy, C. R. , Han, J. , Hong, J. , 1998

机译：BCl（3）/ Cl（2）ICp等离子体中的III族氮化物蚀刻选择性;材料研究学会互联网氮化物半导体研究杂志

Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control

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