IMPEDANCE DIAGRAMS OF SEMI-CONDUCTOR/OXIDE/ELECTROLYTE (SOE) STRUCTURES TO DERIVE EQUIVALENT R-C COMPONENTS OF THE SEMICONDUCTOR SPACE CHARGE.

摘要

A better understanding of the mechanism of electrochemical reactions taking place at a semiconductor/electrolyte interface is attained by the knowledge of the flatband (f.b.) potential referred to the reference electrode.The determination of the potential range where the highly resistant (several MOMEGA) depletion layer is formed,is of peculiar importance for the interpretation of the current potential curves.The f.b.potential is usually determined by the Mott-Schottky plot which often leads to scattered data as pointed out by Zhang.