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Effect of Suppressors on Copper Electrochemical Deposition Fill Efficiency

机译:抑制器对铜电化学沉积填充效率的影响

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摘要

Copper interconnects made by electrochemical deposition (ECD) were first introduced in manufacturing at the 0.25 micron technology node.Since the inception of this process,critical dimensions (CD) have decreased by more than half and aspect ratios have nearly doubled.Metallization challenges due to shrinking dimensions are further compounded by limited conformality of barrier and seed films.
机译:通过电化学沉积(ECD)制造的铜互连首先在0.25微米技术节点中引入制造中.Since对该过程的初始化,临界尺寸(CD)减少了一半以上,宽高比具有几乎增加的。通过有限的屏障和种子膜的合格性进一步复合收缩尺寸。

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