PROCESS AND APPARATUS FOR COLD COPPER DEPOSITION TO ENHANCE COPPER PLATING FILL

摘要

The present invention relates to a process and apparatus for depositing a thin film on a substrate. Process comprises the step and the step of pumping the cryopump transgenic fluid (cryogenic fluid) to via the chuck to cool the wafer chuck and wafer to a temperature of less than about + 20 ℃ to mount the wafer on a wafer chuck (chuck) . Next, while maintaining the wafer chuck and wafer to a temperature of less than about + 20 ℃ to deposit a thin film on the cooled wafer by using the sputtering deposition process. The preferred embodiment of the present invention cryo using liquefied nitrogen as a transgenic fluid and uses copper as the material to be deposited during the sputtering process. In addition, the wafer chuck and the wafer is cooled to a temperature of approximately -100 ℃ in the preferred embodiment. The apparatus comprises a cooling tube carrying a cooling fluid to the chuck by way of a physical vapor deposition vessel, the wafer chuck, a source, a wafer, a wafer chuck of the material to be deposited.