Electrodeposition mechanism of PbSe and PbTe epitaxial films on InP single crystals

摘要

The lead chalcogenide narrow-gap semiconductors PbS,PbSe,PbTe have been applied in infrared detectors and thermal photovoltaic energy converters.The production of photonic devices implies an heteroepitaxial growth on Si or III-V semiconductors.We showed recently that PbSe can be epitaxially electrodeposited on InP single crystals thanks to the addition of Cd~(2+)in the electrolyte(1).In this study the growth mechanism of PbSe and PbTe films,epitaxied on (111)InP,is examinated.