Modeling of Ionized Physical Vapor Deposition of Copper

摘要

We present computer simulations of ionized physical vapor deposition,(IPVD)with ionized magnetron sputtering of copper as the primary system of interest.After calibrating physically-based models used in the simulations,the effects of sputtering-ion energy and sputtering-ion angular flux distributions on the evolution of sub-micron scale features are explored.