A Combined Experimental and Theoretical Investigation of the Surface Reactions in Plasma Deposition of Hydrogenated Amorphous Silicon Films

摘要

Hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) are cost effective alternatives to crystalline silicon in photovoltaics and thin film transistors for flat panel displays.Hydrogenated amorphous and nanocrystalline silicon films can be deposited inexpensively at low temperatures and uniformly over large areas using plasma enhanced chemical vapor deposition from SiH,-containing glow discharges.Experimental research on a-Si:H film deposition has focused primarily on determining the deposition conditions required for producing device quality silicon films.However,the elementary processes that lead to film deposition,H incorporation,and defect generation are still not well understood.Many reactive radicals such as SiH_x (0